copyright@winsemi microelectronics co., ltd., all right reserved. WFSA5406 rev.a feb.2012 n- channel and p-channel silicon mosfets features low on-resistance. composite type with an n-channel mosfet and a p-channel mosfet driving from a 4.5v/-4.5v supply voltage contai ned in a single package. high-density mounting. rohs compliant. applications general-purpose switching device for motor drives, inverters. absolute maximum ratings at ta=250c parameter symbol conditions ratings unit n-ch p-ch drain-to-source voltage v dss 60 -60 v gate-to-source voltage v gss + 25 + 25 v drain current (dc) i d 5-3.5a drain current (pulse) i dp pw 10us, duty cycle 1% 20 -14 a allowable power dissipation p d mounted on a ceramic board (1000mm 2 0.8mm) 1unit 1.3 w total dissipation p t mounted on a ceramic board (1000mm 2 0.8mm) 1.7 w channel temperature t ch 150 0 c storage temperature t stg -55~+150 0 c sop-8
steady, keep you advance WFSA5406 2 /10 n-channel electrical characteristics at ta=25 0 c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =250ua, v gs =0v 60 - - v zero-gate voltage drain current i dss v ds =48v, v gs =0v - - 1 ua gate-to-source leakage current i gss v gs =+ 25v, v ds =0v - - + 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1 2 2.5 v static drain-to-source on-state resistance r ds(on) i d =5a, v gs =10v - 38 52 m ? r ds(on) i d =4a, v gs =4.5v - 55 75 m ? input capacitance c iss v ds =30v, v gs =0v, f=1mhz - 915 - pf output capacitance c oss -70 - reverse transfer capacitance c rss -45 - turn-on delay time t d(on) v gen =10v, v ds =30v, r l =30 ? ,i d =1a, r gen =6 ? -917 ns rise time t r -612 turn-off delay time t d(off) -2546 fall time t f -510 total gate charge q g v ds =30v, v gs =10v, i d =5a -1927 nc gate-to-source charge q gs -4.4 - gate-to-drain ?miller? charge q gd -4.4 - diode forward voltage v sd i s =2.5a, v gs =0v - 0.8 1.1 v
steady, keep you advance WFSA5406 3 /10 n-channel typical characteristics at t a =25 0 c
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steady, keep you advance WFSA5406 5 /10 p-channel electrical characteristics at t a =25 0 c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =-250ua, v gs =0v - 60 - - v zero-gate voltage drain current i dss v ds =- 48v, v gs =0v - - -1 ua gate-to-source leakage current i gss v gs =+ 25v, v ds =0v - - + 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -1 -2 -2.5 v static drain-to-source on-state resistance r ds(on) i d =-3.5a, v gs =-10v - 80 100 m ? r ds(on) i d =-3.1a, v gs =- 4.5v - 100 135 m ? input capacitance c iss v ds =-30v, v gs =0v, f=1mhz - 1050 - pf output capacitance c oss -70 - reverse transfer capacitance c rss -50 - turn-on delay time t d(on) v gen =-10v, v ds =-30v, r l =30 ? ,i d =-1a, r gen =6 ? -714 ns rise time t r -815 turn-off delay time t d(off) -4786 fall time t f -1732 total gate charge q g v ds =-30v, v gs =-10v, i d =-3.5a -2231 nc gate-to-source charge q gs -2.8 - gate-to-drain ?miller? charge q gd -5 - diode forward voltage v sd i s =-2.5a, v gs =0v - -0.8 -1.1 v
steady, keep you advance WFSA5406 6 /10 p-channel typical characteristics at t a =25 0 c
steady, keep you advance WFSA5406 7 /10
steady, keep you advance WFSA5406 8 /10 sop8 package dimension unit:mm
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